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| inchange semiconductor product specification silicon npn power transistors 2SD1855 description ? ? with to-220fa package ? complement to type 2sb1335 ? low collector saturation voltage applications ? for low frequency power amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 80 v v ceo collector -emitter voltage open base 60 v v ebo emitter-base voltage open collector 6 v i c collector current 4 a p c collector power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220fa) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1855 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma; i b =0 60 v v (br)cbo collector-base breakdown voltage i c =50 | a; i e =0 80 v v (br)ebo collector-emitter breakdown voltage i e =50 | a; i c =0 6 v v cesat collector-emitter saturation voltage i c =3a ;i b =0.3a 1.0 v v besat base-emitter saturation voltage i c =3a ;i b =0.3a 1.5 v i cbo collector cut-off current v cb =80v; i e =0 10 | a i ebo emitter cut-off current v eb =6v; i c =0 10 | a h fe dc current gain i c =1a ; v ce =5v 60 320 f t transition frequency i c =0.5a; v ce =5v 8 mhz c ob collector output capacitance f=1mhz ; v cb =10v 90 pf ? h fe classifications d e f 60-120 100-200 160-320 inchange semiconductor product specification 3 silicon npn power transistors 2SD1855 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm) |
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